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MEI
MEI

BSS8402DW Datasheet Preview

BSS8402DW Datasheet

Power MOSFET

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BSS8402DW pdf
N-Channel/P-Channel SC-88
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
BSS8402DW
S-BSS8402DW
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
RθJA
TL
Value
50
± 20
130
520
380
– 55 to
150
328
260
Unit
Vdc
Vdc
mA
mW
°C
° C/W
°C
321
D2 G1 S1
S2 G2 D1
45
6
ORDERING INFORMATION
Device
BSS8402DW
S-BSS8402DW
Marking
Shipping
402 = Made in China
KNP = Made in Taiwan 3000 Tape & Reel
Rev .A 1/6



MEI
MEI

BSS8402DW Datasheet Preview

BSS8402DW Datasheet

Power MOSFET

No Preview Available !

BSS8402DW pdf
BSS8402DW, S-BSS8402DW
N-Channel
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1.)
Gate–Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–to–Source On–Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
50
0.5
– – Vdc
µAdc
– 0.1
– 0.5
±0.1 µAdc
– 1.5 Vdc
Ohms
5.6 10
– 3.5
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
– 42 –
pF
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Coss
15
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
3–
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
td(on) – 5 – ns
td(off) – 7 –
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
Rev .A 2/6


Part Number BSS8402DW
Description Power MOSFET
Maker MEI
Total Page 6 Pages
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