PSU8GA30AT Datasheet 3.3V 8Gb SLC NAND Flash Memory

Manufacturer: MIRA

Overview: PSU8GA30AT NAND Flash Memory 3.3V 8Gb SLC NAND Flash Memory Specification and Technical Notes Part Number PSU8GA30AT Cell SLC PSU8GA30AT Density 8G Organization X8 Vcc 2.7V~3.6V PKG Type TSOP I Deutron Confidential  2011 Deuteron Electronics Corp. All Rights Reserved. Page 1/61 PSU8GA30AT Revision 1.0 June 30, 2011 NAND Flash Memory Deutron Confidential  2011 Deuteron Electronics Corp. All Rights Reserved. Page 2/61 PSU8GA30AT NAND Flash Memory Document Title PSU8GA30AT (1G x 8 bit NAND Flash Memory, SLC) Revision History Rev.

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Datasheet Details

Part number	PSU8GA30AT
Manufacturer	MIRA
File Size	1.08 MB
Description	3.3V 8Gb SLC NAND Flash Memory
Download	PSU8GA30AT Download (PDF)

General Description

Date 0.1 Initial draft February 22, 2011 Revise Copy-Back Program Operation 1.0 with Random Data Input diagram June 30, 2011 Remark Preliminary Preliminary Deutron Confidential  2011 Deuteron Electronics Corp.

Page 3/61 PSU8GA30AT NAND Flash Memory PSU8GA30AT (1G x 8 bit NAND Flash Memory, SLC) Product List Part Number PSU8GA30AT Vcc Range 2.7V~3.6V Organization X8 Package Type TSOP I

Key Features

Voltage Supply: 2.7 V ~ 3.6V.
Organization.
Fast Write Cycle Time - Program time: 300us (Typ. ) - Memory Cell Array: (4K + 218) x 256K x 8bit - Block Erase time: 2.5ms (Typ. ) - Data Register: (4K + 218) x 8bit.
Automatic Program and Erase.
Command/Address/Data Multiplexed I/O Port.
Hardware Data Protection - Page Program: (4K + 218) Bytes - Program/Erase Lockout During Power Transitions - Block Erase: (256K + 13.6K) Bytes.
Page Read Operation.
Re.

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