MORESEMI MSN014WE
N-Channel MOSFET
GENERAL FEATURES
● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD Rating: 2000V HBM● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected Application
● PWM application
● Load switch PIN Configuration Lead Free Marking and pin Assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0214WE MSN0214WE SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 20 ±10 14 44 3 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient(Not