MSN014WE Description
MSN014WE 20V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN014WE Key Features
- VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD Rating: 2000V HBM
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
- ESD protected
- PWM application
- Load switch