MSN0260D
MSN0260D is N-Channel MOSFET manufactured by MORESEMI.
Features
- VDS =20V,ID =60A RDS(ON) <6mΩ @ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Lead Free
Application
- Load switching
- Hard switched and high frequency circuits
- Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-252-2L
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation
IDM PD
Derating factor Single pulse avalanche energy...
