MSN0260D Description
MSN0260D 20V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN0260D Key Features
- VDS =20V,ID =60A RDS(ON) <6mΩ @ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Load switching
- Hard switched and high frequency circuits
- Uninterruptible power supply