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MSN0212W
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
●VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current
Application
● DC/DC Converter ● Notebook Vcore
Lead Free
PIN Configuration
Marking and pin Assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0212W
MSN0212W
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current-Continuous(TA=100℃)
ID
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation
MSN0212W Datasheet
