MSN0212W
MSN0212W is N-Channel MOSFET manufactured by MORESEMI.
Features
- VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
Application
- DC/DC Converter
- Notebook Vcore
Lead Free
PIN Configuration
Marking and pin Assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous Drain Current-Continuous(TA=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Limit
30 ±20 12
8 40 2.5 -55 To 150
Unit
V V A A A W ℃
Thermal Characteristic
Thermal Resistance,Junction-to...