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MSN0212W - N-Channel MOSFET

Features

  • VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.

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Datasheet Details

Part number MSN0212W
Manufacturer MORESEMI
File Size 550.93 KB
Description N-Channel MOSFET
Datasheet download datasheet MSN0212W Datasheet
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Full PDF Text Transcription

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MSN0212W 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ●VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Application ● DC/DC Converter ● Notebook Vcore Lead Free PIN Configuration Marking and pin Assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0212W MSN0212W SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TA=100℃) ID ID (100℃) Pulsed Drain Current Maximum Power Dissipation
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