MSP0515D Description
MSP0515D -55V(D-S) P-Channel Enhancement Mode Power MOS FET General.
MSP0515D Key Features
- VDS =-55V,ID =-15A RDS(ON) <80mΩ @ VGS=-10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
- Power switching application
- Hard switched and high frequency circuits
- DC-DC Converter