MORESEMI Datasheet | Specifications & PDF Download

MSN0880M 75V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 75V,ID =80A RDS(ON) <8mΩ @ VGS=10V（Typ：6.5mΩ） ● Special process

(3 views)

MSN0650K 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V ● High density cell design fo

(3 views)

MSC0207W -20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @

(3 views)

MSN15B5H 150V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDSS =150V,ID =150A RDS(ON) < 8mΩ @ VGS=10V （Typ：6.6 mΩ） ● Good stabil

(3 views)

MSN06M2 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ● Le

(3 views)

MSP2305A -12V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS

(2 views)

MSP0205 -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4

(2 views)

MSN3400 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V

(2 views)

MSN2304 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V ●

(2 views)

MSN014WE 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD

(2 views)

MSN2300 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =4A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ●

(2 views)

MSN2300A 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 5.8A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V

(2 views)

MSN2306 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V

(2 views)

MSP0315D -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-30V,ID =-15A RDS(ON) <54mΩ @ VGS=-10V RDS(ON) <82mΩ @ VGS=-4.5V

(2 views)

MSP0330D -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-30V,ID =-30A RDS(ON) <18mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V

(2 views)

MSP0405W -40V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-40V,ID =-5.3A RDS(ON) <80mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4.

(2 views)

MSP0406W -40V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-40V,ID =-6.2A RDS(ON) <25mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5

(2 views)

MSP0440D -40V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V ● High density cell desig

(2 views)

MSN2302 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 3.0A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V

(2 views)

MSP0650K -60V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V ● High density cell desig

(2 views)