MORESEMI Datasheet | Specifications & PDF Download

MSP0205A -12V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=

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MSN7002 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ● Le

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MSP0625K -60V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V ● High density cell desig

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MSP0625D -60V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V ● High density cell desig

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MSP0315D -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-30V,ID =-15A RDS(ON) <54mΩ @ VGS=-10V RDS(ON) <82mΩ @ VGS=-4.5V

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MSN7002D 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design

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MSN014WE 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD

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MSP0405W -40V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-40V,ID =-5.3A RDS(ON) <80mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4.

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MSN06B0F 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Feature ● VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.7mΩ) ● Special pro

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MSP0205 -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4

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MSP0440D -40V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V ● High density cell desig

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MSP0204E -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4

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MSP4435W -30V(D-S) P-Channel Enhancement Mode Power MOS FET GENERAL FEATURES ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS

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MSN0260D 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =60A RDS(ON) <6mΩ @ VGS=4.5V ● High density cell design fo

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MSC0211GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4

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MSN08B2K 80V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =80V,ID =120A RDS(ON) <6mΩ @ VGS=10V ● High density cell design fo

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MSN3400L 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V

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MSP0204 -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -3.9A RDS(ON) <70mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-

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MSP0304 -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS

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MSN0880K 75V(D-S) N-Channel Enhancement Mode Power MOS FET Features ● VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V ● Special process technology fo

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