MSC0605W Overview
MSC0605W 60V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General.
MSC0605W Key Features
- VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply