Datasheet Summary
60V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
- VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V
（Typ：38mΩ）
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Lead Free
PIN Configuration
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500...