MSC0206W Description
MSC0206W 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General.
MSC0206W Key Features
- VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply