MSC0207GE Description
MSC0207GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General.
MSC0207GE Key Features
- VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
- ESD protected
- PWM application -Load switch