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MSC0606W
N and P-Channel Enhancement Mode Power MOS FET
General Features
● N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V
● P-Channel VDS = -60V,ID = -5A RDS(ON) < 80mΩ @ VGS=-10V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Marking and pin assignment
SOP-8 top view
N-channel
P-channel
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSC0606W
MSC0606W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
Drain-Source Voltage
VDS 60
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current (Note 1) Maximum Power Dissipation
TA=25℃ TA=70℃
TA=25℃
VGS ±20
6.3 ID
4.
MSC0606W Datasheet
