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MSN0880K - N-Channel Enhancement Mode Power MOS FET

Features

  • VDS=75V；ID=80A@ VGS=10V； RDS(ON).

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Datasheet Details

Part number MSN0880K
Manufacturer MORESEMI
File Size 564.98 KB
Description N-Channel Enhancement Mode Power MOS FET
Datasheet download datasheet MSN0880K Datasheet

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Full PDF Text Transcription

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MSN0880K 75V(D-S) N-Channel Enhancement Mode Power MOS FET Features ● VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V ● Special process technology for high ESD capability ● Special designed for convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment PIN Configuration TO-220-3L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0880K MSN0880K TO-220-3L Reel Size - Tape width - Quantity - Table 1.
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