MSN0880H Description
MSN0880H 75V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN0880H Key Features
- VDS = 75V,ID =80A RDS(ON) <8mΩ @ VGS=10V（Typ：6.5mΩ）
- Special process technology for high ESD capability
- Special designed for Convertors and power controls
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply