MORESEMI MSN0880M
N-Channel Enhancement Mode Power MOS FET
| Part No. | MSN0880M |
|---|---|
| Datasheet | MSN0880M Download |
| Manufacturer | MORESEMI |
| Description | N-Channel Enhancement Mode Power MOS FET |
| Buy | Stock & Price |
GENERAL FEATURES
● VDS = 75V,ID =80A RDS(ON) <8mΩ @ VGS=10V（Typ：6.5mΩ）● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Lead Free Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply PIN Configuration Marking and pin assignment TO-263-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0880M MSN0880M TO-263-2L Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Cont
