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MSC8205G - Dual N-Channel Enhancement Mode Power MOS FET

Key Features

  • VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Lead Free.

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Datasheet Details

Part number MSC8205G
Manufacturer MORESEMI
File Size 590.86 KB
Description Dual N-Channel Enhancement Mode Power MOS FET
Datasheet download datasheet MSC8205G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSC8205G 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.