MSC8205G
Key Features
- VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Applications
- Battery protection
- Part: MSC8205G
- Description: Dual N-Channel Enhancement Mode Power MOS FET
- Manufacturer: MORESEMI
- Size: 590.86 KB