MORESEMI MSC8205S
Dual N-Channel Enhancement Mode Power MOS FET
| Part No. | MSC8205S |
|---|---|
| Datasheet | MSC8205S Download |
| Manufacturer | MORESEMI |
| Description | Dual N-Channel Enhancement Mode Power MOS FET |
| Buy | Stock & Price |
GENERAL FEATURES
● VDS = 20V,ID = 6A RDS(ON) <37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
● Battery protection
● Load switch
● Power management PIN Configuration Lead Free Marking and pin assignment SOT-23-6L top view D1 G1 G2 D2 S1 S2 Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package 8205 MSC8205S SOT-23-6L Reel Size Ø180mm Tape width 8mm Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±10 6 25 1.25 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistanc
