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MSP0309W - P-Channel Enhancement Mode Power MOSFET

Key Features

  • VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number MSP0309W
Manufacturer MORESEMI
File Size 476.32 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MSP0309W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSP0309W -30V(D-S) P-Channel Enhancement Mode Power MOS FET GENERAL FEATURES ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.