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MSP3401 Datasheet Preview

MSP3401 Datasheet

P-Channel Enhancement Mode Power MOS FET

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MSP3401
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
VDS = -30V,ID = -4.2A
RDS(ON) < 130m@ VGS=-2.5V
RDS(ON) < 75m@ VGS=-4.5V
RDS(ON) < 55m@ VGS=-10V
High power and current handing capability
Lead free product is acquired
Surface mount package
Lead Free
Application
PWM applications
Load switch
Power management
PIN Configuration
Marking and Pin Assignment
SOT-23 top view
D
G
S
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
MSP3401
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±12
-4.2
-30
1.2
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
104 /W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6




MORESEMI

MSP3401 Datasheet Preview

MSP3401 Datasheet

P-Channel Enhancement Mode Power MOS FET

No Preview Available !

MSP3401
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Symbol
Condition
Min Typ Max Unit
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VGS=0V ID=-250μA
VDS=-24V,VGS=0V
VGS=±10V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-10V, ID=-4.2A
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
VDS=-5V,ID=-4.2A
-30 - V
- - -1 μA
- - ±100 nA
-0.7 -1
- 50
- 64
95
- 10
-1.3
55
75
130
-
V
m
m
m
S
Clss
- 950
-
PF
VDS=-15V,VGS=0V,
Coss
- 115
-
PF
F=1.0MHz
Crss
- 75
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-15V,ID=-3.2A
VGS=-10V,RGEN=6
VDS=-15V,ID=-4A,VGS=-4.5V
-
-
-
-
-
-
-
7
3
30
12
9.5
2
3
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=-1A
- - -1.2 V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
MORE Semiconductor Company Limited
http://www.moresemi.com
2/6


Part Number MSP3401
Description P-Channel Enhancement Mode Power MOS FET
Maker MORESEMI
Total Page 6 Pages
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