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MOS-TECH
MOS-TECH

MT2030 Datasheet Preview

MT2030 Datasheet

N-Channel Power MOSFET

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MT2030 pdf
MOS-TECH Semiconductor Co.,LTD
M7
N-Channel Power® MOSFET
30 V,  A, 1.5 mΩ
Features
„ Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 12 A
„ Max rDS(on) = 24.5 mΩ at VGS = 4.5 V, ID = 10 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free and RoHS Compliant
November 2010
General Description
This N-Channel MOSFET is produced using MOS-TECH
Semiconductor’s advanced Power® process that has
been especially tailored to minimize the on-state resistance.This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
„ DC/DC Buck Converters
„ Notebook battery power management
„ Load Switch in Notebook
D
1 TO-251&TO-126
1. Gata 2.Drain 3.Source
G
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
20
38
12
50
21
25
2.4
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
5.0
53
°C/W
Device Marking
MT2030
Device
MT2030
Package
TO-251&126
Reel Size
-
Tape Width
-
Quantity
50 units
©2010 MOS-TECH Semiconductor Corporation
MT2030 Rev.A0
1
www.mtsemi.com



MOS-TECH
MOS-TECH

MT2030 Datasheet Preview

MT2030 Datasheet

N-Channel Power MOSFET

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MT2030 pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
30
V
14 mV/°C
1 μA
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 12 A,
TJ = 125 °C
VDS = 5 V, ID = 12 A
1.2
1.8
-6
17.5
24.5
18.6
45
2.0
19.5
26
25.7
V
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
1075 1430
pF
380 505
pF
40 55 pF
0.2 1.0 2.0
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 12 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 15 V,
ID = 12 A
9 18 ns
2 10 ns
19 33 ns
2 10 ns
16 22 nC
8 11 nC
3.2 nC
1.8 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 1.9 A
VGS = 0 V, IS = 12 A
(Note 2)
(Note 2)
0.75 1.2
0.84 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 12 A, di/dt = 100 A/μs
25 40 ns
9 18 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 21 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2010 MOS-TECH Semiconductor Corporation
MT2030 Rev.A0
2
www.mtsemi.com


Part Number MT2030
Description N-Channel Power MOSFET
Maker MOS-TECH
Total Page 9 Pages
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