MT3108 mosfet equivalent, n-channel powe mosfet.
* RDS(on) = mΩ ( Typ.) @ VGS = 10V, ID = 5A
* Fast switching speed
* Low gate charge
* High performance trench technology for extremely low RDS(on)
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This N-Channel MOSFET is producedusing PRVWHFK Vemiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
D
G DS
TO-220
G S
MOSFET Maximum .
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