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MT3116 Datasheet N-Channel Powe MOSFET

Manufacturer: MOS-TECH

Download the MT3116 datasheet PDF. This datasheet also includes the MT3116-MOS variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MT3116-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT3116
Manufacturer MOS-TECH
File Size 533.05 KB
Description N-Channel Powe MOSFET
Download MT3116 Download (PDF)

General Description

This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Applications • DC-DC primary bridge • DC-DC Synchronous rectification • Hot swap D G DS TO-220 G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Curren - Continuous (Silicon Limited) - Continuous( Package Limited) - Continuous - Pulsed TC = 25oC TC = 25oC TC = 25oC(Note 1a) EAS PD TJ, TSTG Single Pulsed Avalanche Energy Power Dissip

Overview

MOS-TECH Semiconductor Co.,LTD MT3116 N-Channel Power MOSFET 100V, 176A, 3.

Key Features

  • Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extr emely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant General.

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