Datasheet4U Logo Datasheet4U.com

MT3275 - N-Channel Power MOSFET

Download the MT3275 datasheet PDF. This datasheet also covers the MT3275-MOS variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N-Channel MOSFET is produced using mos-tech Semiconductor’s adcanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

DC to DC convertors / Synchronous Rectification D GDS TO-220

Key Features

  • RDS(on) = 3mΩ ( Typ. )@ VGS = 10V, ID = 75A.
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(on).
  • High power and current handling capability.
  • RoHS compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT3275-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT3275
Manufacturer MOS-TECH
File Size 605.02 KB
Description N-Channel Power MOSFET
Datasheet download datasheet MT3275 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MT3270B Wide Dynamic Range DTMF Receiver Zarlink Semiconductor
MT3271B Wide Dynamic Range DTMF Receiver Zarlink Semiconductor
MT320 wireless module Ezurio
MT32018 Encoder / Decoder MCE
MT3202 60V 65A N-Channel MOSFET MT Semiconductor

Other Datasheets by MOS-TECH

Part Number Description
MT3240 N-Channel Power MOSFET
MT3245A N-Channel Power MOSFET
MT3258 N-Channel Power MOSFET
MT3258B N-Channel Power MOSFET
MT301 P-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOS-TECH Semiconductor Co.,LTD MT3275 N-Channel Power MOSFET 75V, 200A, 3mΩ Features • RDS(on) = 3mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handling capability • RoHS compliant Description This N-Channel MOSFET is produced using mos-tech Semiconductor’s adcanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.