• Part: MT3275
  • Manufacturer: MOS-TECH
  • Size: 605.02 KB
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MT3275 Key Features

  • RDS(on) = 3mΩ ( Typ.)@ VGS = 10V, ID = 75A
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low RDS(on)
  • High power and current handling capability
  • RoHS pliant
  • DC to DC convertors / Synchronous Rectification
  • Continuous Continuous
  • Continuous (TC = 25oC, Package Limited)
  • Pulsed

Related MOS-TECH Datasheets

Part Number Description
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MT3258B N-Channel Power MOSFET
MT301 P-Channel Power MOSFET

MT3275 Description

This N-Channel MOSFET is produced using mos-tech Semiconductor’s adcanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC convertors / Synchronous Rectification D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage...