Download the MT9926 datasheet PDF.
This datasheet also includes the MT9926-MOS variant, as both parts are published together in a single manufacturer document.
MT9926 N-Channel Enhancement Mode Field Effect Transistor
3URGXFW6XPPDU PRODUCT SUMMARY VDSS ID RDS(ON) (m¡) Typ 22 @ VGS=4.5V 20V 6A 35 @ VGS=2.
Key Features
Super high dense cell design for low R DS(ON) Rugged and reliable Simple drive requirement
SO-8 package
Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous嘌@Tj=125ć
Symbol
VDS VGS ID
- Pulse d b
IDM
Drain-source Diode Forward Current嘌 Maximum Power Dissipation嘌 Operating Junction and Storage Temperature Range
IS PD
TJ,TSTG.
