S20C90 Datasheet | Mospec Semiconductor

MOSPEC S20C70 Thru S20C100 Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O In pliance with EU Ro Hs 2002/95/EC directives SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 70-100 VOLTS TO-220AB MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRRM VRWM 70 70 S20C Unit 80 90 100 80 90 100 V RMS Reverse Voltage VR(RMS) 49 56 63 70 Average Rectifier Forward Current ( per diode ) Total Device (Rated VR),TC=100 IF(AV) 10 20 Peak Repetitive Forward Current (Rate VR, Square Wave, 20k Hz) IFM 20 A Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single IFSM 200 A phase, 60Hz) Operating and Storage Junction Temperature Range TJ , TSTG -65 to...