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MT4606 - N+P-Channel Enhancement Mode Field Effect Transistor

General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

Key Features

  • Q1: N-Channel 7A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V.
  • Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V.
  • Fast switching speed.
  • High power and handling capability in a widely used surface mount package DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S1 S S S Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gat.

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Datasheet Details

Part number MT4606
Manufacturer MT Semiconductor
File Size 476.85 KB
Description N+P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet MT4606 Datasheet

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Full PDF Text Transcription (Reference)

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MT4606 September 2008 MT4606 Dual N & P-Channel PowerTrench MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • Q1: N-Channel 7A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V • Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.