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MT Semiconductor

MT4606 Datasheet Preview

MT4606 Datasheet

N+P-Channel Enhancement Mode Field Effect Transistor

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September 2008
MT4606
Dual N & P-Channel PowerTrenchMOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
MOS-TECH Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
Q1: N-Channel
7A, 30V
RDS(on) = 0.028@ VGS = 10V
RDS(on) = 0.040@ VGS = 4.5V
Q2: P-Channel
-5A, -30V
RDS(on) = 0.052@ VGS = -10V
RDS(on) = 0.080@ VGS = -4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
MT4606
MT4606
13"
2008 MOS-TECH Semiconductor Corporation
Q2
5
6
Q1
7
8
4
3
2
1
Q1 Q2
30 30
±20 ±20
7 -5
20 -20
2
1.6
1
0.9
-55 to +150
Units
V
V
A
W
°C
78 °C/W
40 °C/W
Tape width
12mm
Quantity
2500 units
MT4606 Rev B




MT Semiconductor

MT4606 Datasheet Preview

MT4606 Datasheet

N+P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSSF
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VDS = -24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
Q1 30
Q2 -30
V
Q1 25 mV/°C
Q2 -22
Q1 1 µA
Q2 -1
All 100 nA
All -100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VDS = VGS, ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VGS = 10 V, ID = 7 A
VGS = 10 V, ID = 7 A, TJ = 125°C
VGS = 4.5 V, ID = 6 A
VGS = -10 V, ID = -5 A
VGS = -10 V, ID = -5 A, TJ = 125°C
VGS = -4.5 V, ID = -4 A
VGS = 10 V, VDS = 5 V
VGS = -10 V, VDS = -5 V
VDS = 5 V, ID = 7 A
VDS = -5 V, ID =-5 A
Q1 1 1.6 3
V
Q2 -1 -1.7 -3
Q1 -4.3 mV/°C
Q2 4
Q1 21 28 m
32 42
27 40
Q2 41 52
58 78
58 80
Q1 20
Q2 -20
Q1 19
Q2 11
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Q1
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
Q2
Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz
Q1
Q2
Q1
Q2
Q1
Q2
789
690
173
306
66
77
pF
pF
pF
©2008 MOS-TECH Semiconductor Corporation
MT4606 Rev B


Part Number MT4606
Description N+P-Channel Enhancement Mode Field Effect Transistor
Maker MT Semiconductor
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MT4606 Datasheet PDF






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