MT4606 - N+P-Channel Enhancement Mode Field Effect Transistor

Product Overview

MT Semiconductor

Datasheet Details

Part number	MT4606
Manufacturer	MT Semiconductor
File Size	476.85 KB
Description	N+P-Channel Enhancement Mode Field Effect Transistor
Datasheet	MT4606 Datasheet
Additional preview pages of the MT4606 datasheet.

Product details

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

Features

Q1: N-Channel 7A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V.
Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V.
Fast switching speed.
High power and handling capability in a widely used surface mount package DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S1 S S S Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gat.

📁 Similar Datasheet

MT4600 - P & N-Channel 100-V(D-S) MOSFET (Matrix Microtech)
MT4601B02-1 - LCD Module (CSOT)
MT4601B02-2 - LCD Module (CSOT)
MT46H128M16LF - Mobile Low-Power DDR SDRAM (Micron Technology)
MT46H128M32L2 - Mobile Low-Power DDR SDRAM (Micron Technology)
MT46H16M16LF - Mobile Low-Power DDR SDRAM (Micron Technology)
MT46H16M32LF - Mobile Low-Power DDR SDRAM (Micron Technology)
MT46H16M32LG - Mobile Low-Power DDR SDRAM (Micron Technology)

Other Datasheets by MT Semiconductor

MT4605 - 20V Power MOSFET
MT4607 - Dual N & P-Channel PowerTrench MOSFET
MT4613 - Dual N- & P-Channel Power MOSFET
MT4624 - 20V Power MOSFET
MT4100 - Dual N- & P-Channel Power MOSFET
MT4110 - 100V 8A N-Channel MOSFET

Published: Apr 7, 2015 |