VBsemi Electronics MT4606
N-Channel MOSFET
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg and UIS Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Motor Drive● Mobile Power Bank S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 D1 G1 S1 S2 G2 D2
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation VDS 30 - 30 V VGS ± 20 ± 20 TC = 25 °C 8e - 8e TC = 70 °C TA = 25 °C ID 6.8 6.8b, c - 6.8 - 6.6b, c TA = 70 °C 5.4b, c - 5.3b, c IDM 40 - 40 A TC = 25 °C TA = 25 °C IS 2.6 1.6b, c - 2.6 - 1.6b, c ISM 40 - 40 L = 0.1 mH IAS 10 EAS 5 - 20 20 mJ TC = 25 °C 3.1 3.2 TC = 70 °C TA = 25 °C PD 2 2b, c 2.1 W 2b, c TA = 70 °C 1.28b, c 1.28b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Parameter Symbol Typ.