MT4606 Overview
These dual N- and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
MT4606 Key Features
- Q1: N-Channel
- Q2: P-Channel
- 5A, -30V
- Fast switching speed
- High power and handling capability in a widely used surface mount package
