Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
Features
- Q1: N-Channel
7A, 30V
RDS(on) = 0.028Ω @ VGS = 10V
RDS(on) = 0.040Ω @ VGS = 4.5V.
- Q2: P-Channel
-5A, -30V
RDS(on) = 0.052Ω @ VGS = -10V
RDS(on) = 0.080Ω @ VGS = -4.5V.
- Fast switching speed.
- High power and handling capability in a widely used surface mount package
DD2 DD2 DD1 DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGSS ID PD
TJ, TSTG
Drain-Source Voltage Gat.
MT4606 Datasheet
