The MwT- LN600 is a super low noise, quasi enhancement-mode pHEMT whose nominal 0.15 micron gate length and 600 micron gate width make it ideally suited for applications requiring very low noise and high associated gain up to 20 GHz.
The device is equally effective for wideband (e.g.
Key Features
0.50 dB Minimum Noise Figure at 12 GHz 8.0 dB Associated Gain at 12 GHz 20.0 dBm P1dB at 12 GHz 0.15 Micron x 600 Micron Gate.
Full PDF Text Transcription for MwT-LN600 (Reference)
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MwT-LN600 26 GHz Super Low Noise pHEMT Device May 2010 FEATURES 0.50 dB Minimum Noise Figure at 12 GHz 8.0 dB Associated Gain at 12 GHz 20.0 dBm P1dB at 12 GHz 0.15 Micro...
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Hz 8.0 dB Associated Gain at 12 GHz 20.0 dBm P1dB at 12 GHz 0.15 Micron x 600 Micron Gate APPLICATIONS Excellent Choice for Super Low Noise Applications Ideal for Commercial, Military, Hi-Rel Space Applications DESCRIPTION The MwT- LN600 is a super low noise, quasi enhancement-mode pHEMT whose nominal 0.15 micron gate length and 600 micron gate width make it ideally suited for applications requiring very low noise and high associated gain up to 20 GHz. The device is equally effective for wideband (e.g. 6 to 18 GHz) and narrow-band applications. Each wafer can be screened to meet quality and reliability requirements of spac
MwT-LN600 Datasheet
