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MM60G3U65B Datasheet Preview

MM60G3U65B Datasheet

IGBT

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December 2019
Version 01
MM60G3U65B
650V 60A IGBT
RoHS Compliant
PRODUCT FEATURES
650V IGBT chip in trench FS-technology
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM60G3U65B 650V 60A
VCE(sat) TJ=25°C
1.8V
TJmax
175°C
Marking
MM60G3U65B
Package
TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=90
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
TC=25
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Torque to heatsink
RecommendedM3
Weight
Values
Unit
650
V
±20
85
60
A
240
300
W
650
V
60
A
240
175
-40~175
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MM60G3U65B Datasheet Preview

MM60G3U65B Datasheet

IGBT

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MM60G3U65B
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=2.0mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=60A, VGE=15V, TJ=25
IC=60A, VGE=15V, TJ=125
IC=60A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=650V, VGE=0V, TJ=25
VCE=650V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Qg
Gate Charge
VCE=400V, IC=60A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=400V,IC=60A
RG =7.5Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=400V,IC=60A
RG =7.5Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=400V,IC=60A
RG =7.5Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
4.0
-200
Typ.
5.0
1.8
2.05
2.2
260
4.9
145
25
30
30
28
28
30
130
160
170
38
38
42
1.26
1.45
1.04
1.12
Max. Unit
6.0
2.2
V
100 µA
10 mA
200 nA
nC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
0.5 K /W
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=60A , VGE=0V, TJ =25
IF=60A , VGE=0V, TJ =125
IF=60A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=60A , VR=400V
dIF/dt=-2000A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.9
2.4
1.7
V
1.65
130
ns
51
A
3.5
µC
1.1
mJ
1.05 K /W
2


Part Number MM60G3U65B
Description IGBT
Maker MacMic
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