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MMG150B065PD6EN Datasheet Preview

MMG150B065PD6EN Datasheet

IGBT

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October 2015
MMG150B065PD6EN
650V 150A IGBT Module
Version 01
RoHS Compliant
PRODUCT FEATURES
IGBT3 CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
IC
Gate Emitter Voltage
DC Collector Current
TC=25
TC=80
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
650
V
±20
200
150
A
300
428
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
650
V
IF(AV)
IFRM
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
150
A
300
I2t
TJ =125, t=10ms, VR=0V
1800
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMG150B065PD6EN Datasheet Preview

MMG150B065PD6EN Datasheet

IGBT

No Preview Available !

MMG150B065PD6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE, IC=2.4mA
4.9 5.8 6.5
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
IC=150A, VGE=15V, TJ=25
IC=150A, VGE=15V, TJ=150
VCE=650V, VGE=0V, TJ=25
VCE=650V, VGE=0V, TJ=150
VCE=0V,VGE=±15V, TJ=150
1.45
1.7
-400
2
1.9 V
1 mA
5 mA
400 nA
Qg
Gate Charge
VCE=300V, IC=150A , VGE=±15V
0.95
µC
Cies
Cres
td(on)
tr
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
VCE=25V, VGE=0V, f =1MHz
VCC=300V,IC=150A
RG =2.2,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
9.3
nF
290
pF
200
ns
210
ns
70
ns
80
ns
td(off)
tf
Eon
Eoff
ISC
Turn off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit Current
VCC=300V,IC=150A
RG =2.2,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
VCC=300V,IC=150A
RG =2.2,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
tpsc6µS , VGE=15V
TJ=125,VCC=360V
300
ns
330
ns
50
ns
70
ns
0.75
mJ
1.2
mJ
4
mJ
5.15
mJ
750
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.35 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VF
Forward Voltage
IF=150A , VGE=0V, TJ=25
IF=150A , VGE=0V, TJ=150
1.55 1.95
V
1.45
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=150A , VR=300V
dIF/dt=-1600A/μs
TJ =150
210
ns
95
A
11
µC
Erec
Reverse Recovery Energy
3.5
mJ
RthJCD
Junction to Case Thermal Resistance Per Diode
0.6 K /W
2


Part Number MMG150B065PD6EN
Description IGBT
Maker MacMic
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MMG150B065PD6EN Datasheet PDF






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