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MMG150J120UZ6TC Datasheet Preview

MMG150J120UZ6TC Datasheet

IGBT

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May 2020
PRODUCT FEATURES
IGBT CHIP(Trench+Field Stop technology)
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Popular SOT-227 Package
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
MMG150J120UZ6TC
Version 01
1200V 150A IGBT Module
RoHS Compliant
IGBT
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25,TJmax=175
TC=95,TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=175
MODULE CHARACTERISTICS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Visol
Torque
Isolation Breakdown Voltage
to heatsink
to terminal
AC, 50Hz(R.M.S), t=1minute
RecommendedM4
RecommendedM4
Weight
Values
Unit
1200
V
±20
218
150
A
300
750
W
Values
Unit
175
-40~150
°C
-40~125
3000
V
0.7~1.1
Nm
0.7~1.1
Nm
26.5
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
MMG150J120UZ6TC




MacMic

MMG150J120UZ6TC Datasheet Preview

MMG150J120UZ6TC Datasheet

IGBT

No Preview Available !

MMG150J120UZ6TC
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=6mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=150A, VGE=15V, TJ=25
IC=150A, VGE=15V, TJ=125
IC=150A, VGE=15V, TJ=150
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=150A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=150A
RG =2.0Ω,
VGE=±15V,
Inductive Load
VCC=600V,IC=150A
RG =2.0Ω,
VGE=±15V,
Inductive Load
VCC=600V,IC=150A
RG =2.0Ω,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=150,VCC=800V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
6.0
1.85
2.1
2.15
4
0.75
10.5
500
90
110
48
54
350
420
120
200
8.5
12
8.1
14.4
560
Max. Unit
6.5
2.25
V
1
mA
10 mA
400 nA
Ω
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.2 K /W
2
MMG150J120UZ6TC


Part Number MMG150J120UZ6TC
Description IGBT
Maker MacMic
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MMG150J120UZ6TC Datasheet PDF






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