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MMG150WJ120XB6TC Datasheet Preview

MMG150WJ120XB6TC Datasheet

IGBT

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April 2021
PRODUCT FEATURES
High level of integration
IGBT CHIP(Trench+FS)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
MMG150WJ120XB6TC
Preliminary
1200V 150A PIM Module
RoHS Compliant
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25, TJmax=175
TC=95, TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
218
150
A
300
750
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
150
A
300
2450
A2s
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMG150WJ120XB6TC Datasheet Preview

MMG150WJ120XB6TC Datasheet

IGBT

No Preview Available !

MMG150WJ120XB6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=6mA
VCE(sat)
Collector - Emitter
Saturation Voltage
IC=150A, VGE=15V, TJ=25
IC=150A, VGE=15V, TJ=125
IC=150A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
RGint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=150A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=150A
RG =3.6,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=150A
RG =3.6,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=150A
RG =3.6,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µs , VGE=15V
TJ=125,VCC=800V
RthJC Junction to Case Thermal Resistance (Per IGBT)
Min.
5.0
-400
Typ.
5.8
1.85
2.15
2.2
4
0.75
10.5
500
95
110
125
48
52
54
355
395
405
130
220
240
15.5
17.5
12.1
13.2
560
Max. Unit
6.5
2.25
V
1
mA
10
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.2 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=150A , VGE=0V, TJ =25
IF=150A , VGE=0V, TJ =125
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=150A , VGE=0V, TJ =150
IF=150A , VR=600V
dIF/dt=-2500A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
Min. Typ. Max. Unit
1.9
2.3
1.6
V
1.55
500
ns
160
A
33.5
µC
12.5
mJ
0.5 K /W


Part Number MMG150WJ120XB6TC
Description IGBT
Maker MacMic
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