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MMG15H120XB6TN Datasheet Preview

MMG15H120XB6TN Datasheet

IGBT

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May 2015
MMG15H120XB6TN
1200V 15A PIM Module
Version 01
RoHS Compliant
PRODUCT FEATURES
High level of integration
IGBT3 CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=80
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
1200
±20
25
15
30
105
Unit
V
A
W
Values
1200
15
30
60
Unit
V
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




MacMic

MMG15H120XB6TN Datasheet Preview

MMG15H120XB6TN Datasheet

IGBT

No Preview Available !

MMG15H120XB6TN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE, IC=0.5mA
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
IC=15A, VGE=15V, TJ=25
IC=15A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=15A , VGE=±15V
Cies
Cres
td(on)
tr
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=15A
RG =75,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
td(off)
tf
Eon
Eoff
ISC
Turn off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit Current
VCC=600V,IC=15A
RG =75,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=15A
RG =75,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=900V
RthJC
Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
5.8
1.7
1.9
0
0.15
1.1
0.04
90
90
30
50
420
520
70
90
1.5
2.1
1.1
1.3
Max. Unit
6.5
2.15 V
100 µA
1 mA
400 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
60
A
1.2 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=15A , VGE=0V, TJ=25
IF=15A , VGE=0V, TJ=125
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=15A , VR=600V
dIF/dt=-400A/μs
TJ =125
Erec
Reverse Recovery Energy
RthJCD
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.65
1.65
250
16
3
1.1
Max. Unit
2.15
V
ns
A
µC
mJ
1.5 K /W
2


Part Number MMG15H120XB6TN
Description IGBT
Maker MacMic
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MMG15H120XB6TN Datasheet PDF






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