900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






MacMic

MMG200D170B6TC Datasheet Preview

MMG200D170B6TC Datasheet

IGBT

No Preview Available !

June 2019
PRODUCT FEATURES
IGBT CHIP(1700V Trench+Field Stop technology)
Low turn-off losses, short tail current
VCE(sat) with positive temperature coefficient
Ultra Low Loss,High Ruggedness
Free wheeling diodes with fast and soft reverse recovery
MMG200D170B6TC
Version 01
1700V 200A IGBT Module
RoHS Compliant
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25,TJmax=175
TC=95,TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=175
Values
Unit
1700
V
±20
300
200
A
400
1500
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
Unit
1700
V
200
A
400
6500
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
MMG200D170B6TC




MacMic

MMG200D170B6TC Datasheet Preview

MMG200D170B6TC Datasheet

IGBT

No Preview Available !

MMG200D170B6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=8mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=200A, VGE=15V, TJ=25
IC=200A, VGE=15V, TJ=125
IC=200A, VGE=15V, TJ=150
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=1700V, VGE=0V, TJ=25
VCE=1700V, VGE=0V, TJ=150
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=900V, IC=200A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=900V,IC=200A
RG =5.1Ω,
VGE=±15V,
Inductive Load
VCC=900V,IC=200A
RG =5.1Ω,
VGE=±15V,
Inductive Load
VCC=900V,IC=200A
RG =5.1Ω,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=150,VCC=1000V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-500
Typ.
6.0
2.2
2.5
2.6
3
1.6
19
610
160
180
130
140
600
700
200
300
111
140
150
34
52
56
720
Max. Unit
6.5
2.6
V
2
mA
20 mA
500 nA
Ω
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.1 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=200A , VGE=0V, TJ=25
VF
Forward Voltage
IF=200A , VGE=0V, TJ=125
IF=200A , VGE=0V, TJ=150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=200A , VR=900V
dIF/dt=-1100A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.8
2.2
1.9
V
1.9
1380
ns
141
A
95
µC
40
mJ
0.16 K /W
2
MMG200D170B6TC


Part Number MMG200D170B6TC
Description IGBT
Maker MacMic
PDF Download

MMG200D170B6TC Datasheet PDF






Similar Datasheet

1 MMG200D170B6TC IGBT
MacMic





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy