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MMG300B065PD6TC Datasheet Preview

MMG300B065PD6TC Datasheet

IGBT

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April 2019
MMG300B065PD6TC
650V 300A Three Level Inverter Module
Version 01
RoHS Compliant
PRODUCT FEATURES
IGBT CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Low switching losses and short tail current
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONS
3-Level-Applications
Solar Applications
UPS Systems
IGBT(T1T2T3T4)
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25,TJmax=175
TC=60,TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=175
Values
Unit
650
V
±20
350
300
A
600
882
W
Diode(D1D2D3D4D5D6)
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
650
V
300
A
600
7200
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




MacMic

MMG300B065PD6TC Datasheet Preview

MMG300B065PD6TC Datasheet

IGBT

No Preview Available !

MMG300B065PD6TC
IGBT(T1T2T3T4)
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=4.8mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=300A, VGE=15V, TJ=25
IC=300A, VGE=15V, TJ=125
IC=300A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=650V, VGE=0V, TJ=25
VCE=650V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=300A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=300V,IC=300A
RG =1.5,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=300V,IC=300A
RG =1.5,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=300V,IC=300A
RG =1.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc6µS , VGE=15V
TJ=125,VCC=360V
RthJC Junction to Case Thermal Resistance Per IGBT
Diode(D1D2D3D4D5D6)
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=300A , VGE=0V, TJ=25
VF
Forward Voltage
IF=300A , VGE=0V, TJ=125
IF=300A , VGE=0V, TJ=150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=300A , VR=300V
dIF/dt=-4000A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min.
5.0
-400
Typ.
6.0
1.55
1.75
1.8
1
1.4
19.4
800
70
80
65
70
370
400
60
65
4.1
5.2
6.1
9.5
11.2
12
1400
Max. Unit
6.5
2.0
V
1
mA
5
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.17 K /W
Min. Typ. Max. Unit
1.7
2.1
1.55
V
1.45
160
ns
195
A
17
µC
7.8
mJ
0.3 K /W
2


Part Number MMG300B065PD6TC
Description IGBT
Maker MacMic
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