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MMG300D120B6TN Datasheet Preview

MMG300D120B6TN Datasheet

IGBT

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April 2015
MMG300D120B6TN
Version 01
1200V 300A IGBT Module
RoHS Compliant
PRODUCT FEATURES
IGBT3 CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=80
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1200
±20
V
450
300
A
600
1450
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
1200
V
IF(AV)
IFRM
I2t
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
TJ =125, t=10ms, VR=0V
300
600
A
19000
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMG300D120B6TN Datasheet Preview

MMG300D120B6TN Datasheet

IGBT

No Preview Available !

MMG300D120B6TN
IGBT-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=12mA
IC=300A, VGE=15V, TJ=25
IC=300A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=300A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=300A
RG =2.4,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=300A
RG =2.4,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=300A
RG =2.4,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=900V
5.0
-400
5.8
1.7
1.9
2.5
2.8
21
850
160
170
40
45
450
520
100
160
16.5
25
24.5
37.0
1200
6.5
2.15 V
1 mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.085 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VF
trr
IRRM
QRR
Erec
RthJCD
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=300A , VGE=0V, TJ=25
IF=300A , VGE=0V, TJ=125
IF=300A , VR=600V
dIF/dt=-6000A/μs
TJ =125
Reverse Recovery Energy
Junction to Case Thermal Resistance Per Diode
1.65 2.15
1.65
V
300
ns
270
A
56
µC
26
mJ
0.15 K /W
2


Part Number MMG300D120B6TN
Description IGBT
Maker MacMic
PDF Download

MMG300D120B6TN Datasheet PDF






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