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MacMic

MMG400D120B6BHN Datasheet Preview

MMG400D120B6BHN Datasheet

IGBT

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May 2016
PRODUCT FEATURES
ƶ High short circuit capability,self limiting short circuit current
ƶ IGBT CHIP(T4 Fast Trench+Field Stop technology)
ƶ VCE(sat) with positive temperature coefficient
ƶ Fast switching and short tail current
ƶ Free wheeling diodes with fast and soft reverse recovery
ƶ Low switching losses
ƶ Internal insulation ceramic substrates ˖ALN
ƶ TJmax =175°C
APPLICATIONS
ƶ High frequency switching application
ƶ Medical applications
ƶ Motion/servo control
ƶ UPS systems
MMG400D120B6BHN
Preliminary
1200V 400A IGBT Module
RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25ć
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25ć, TJmax=175ć
TC=105ć, TJmax=175ć
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25ć, TJmax=175ć
Values
Unit
1200
V
±20
625
400
A
800
3000
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25ć
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125ć, t=10ms, VR=0V
Values
Unit
1200
V
400
A
800
25000
A2S
MacMic Science & Technology Co., Ltd.
Add˖#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.˖+86-519-85163708 Fax˖+86-519-85162291 Post Code˖213022 Website ˖www.macmicst.com




MacMic

MMG400D120B6BHN Datasheet Preview

MMG400D120B6BHN Datasheet

IGBT

No Preview Available !

MMG400D120B6BHN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=16mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=400A, VGE=15V, TJ=25ć
IC=400A, VGE=15V, TJ=125ć
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25ć
VCE=1200V, VGE=0V, TJ=125ć
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25ć
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=400A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25ć
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=400A
RG =1.8ȍ,
VGE=±15V,
Inductive Load
TJ=125ć
TJ=150ć
TJ=25ć
TJ=125ć
TJ=150ć
TJ=25ć
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=400A
RG =1.8ȍ,
VGE=±15V,
Inductive Load
TJ=125ć
TJ=150ć
TJ=25ć
TJ=125ć
TJ=150ć
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCC=600V,IC=400A TJ=125ć
RG =1.8ȍ,
TJ=150ć
VGE=±15V,
Inductive Load
TJ=125ć
TJ=150ć
tpscİ10µS , VGE=15V
TJ=125ć,VCC=600V
RthJC Junction to Case Thermal Resistance ˄ Per IGBT˅
Min.
5.4
-400
Typ.
6.0
2.1
2.5
1.9
1.9
25
1.4
170
180
190
75
85
90
440
490
520
45
65
75
28
31
22
24
1600
Max. Unit
6.5
2.5
V
1
mA
10
400 nA
ȍ
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.05 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
VF
Forward Voltage
Parameter/Test Conditions
IF=400A , VGE=0V, TJ=25ć
IF=400A , VGE=0V, TJ=125ć
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
IF=400A , VR=600V
dIF/dt=-4000A/ȝs
TJ =125ć
Erec
RthJCD
Reverse Recovery Energy
Junction to Case Thermal Resistance ˄ Per Diode˅
2
Min. Typ. Max. Unit
1.65 2.15
V
1.65
450
ns
365
A
77
µC
31
mJ
0.085 K /W


Part Number MMG400D120B6BHN
Description IGBT
Maker MacMic
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