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MacMic

MMG450D120B6TC Datasheet Preview

MMG450D120B6TC Datasheet

IGBT

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July 2020
PRODUCT FEATURES
IGBT CHIP(Trench+Field Stop technology)
VCE(sat) with positive temperature coefficient
High short circuit capability
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
MMG450D120B6TC
Version 01
1200V 450A IGBT Module
RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25, TJmax=175
TC=90, TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
630
450
A
900
2142
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
1200
400
800
39.2
Unit
V
A
KA2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
MMG450D120B6TC




MacMic

MMG450D120B6TC Datasheet Preview

MMG450D120B6TC Datasheet

IGBT

No Preview Available !

MMG450D120B6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE(sat)
Collector - Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=VGE, IC=18mA
IC=450A, VGE=15V, TJ=25
IC=450A, VGE=15V, TJ=125
IC=450A, VGE=15V, TJ=150
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=450A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=450A
RG =2.0Ω,
VGE=±15V,
Inductive Load
VCC=600V,IC=450A
RG =2.0Ω,
VGE=±15V,
Inductive Load
VCC=600V,IC=450A
RG =2.0Ω,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125,VCC=800V
RthJC Junction to Case Thermal Resistance (Per IGBT)
Min.
5.0
-400
Typ.
5.8
1.85
2.15
2.2
1.4
2.25
31.5
1.5
100
120
130
78
86
86
550
590
610
120
200
220
39
42
52
56
1700
Max. Unit
6.5
2.25
V
1
mA
10
400 nA
Ω
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.07 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=400A , VGE=0V, TJ =25
VF
Forward Voltage
IF=400A , VGE=0V, TJ =125
IF=400A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=450A , VR=600V
dIF/dt=-5300A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
MMG450D120B6TC
Min. Typ. Max. Unit
1.75
2.3
1.5
V
1.45
530
ns
485
A
133
µC
59.5
mJ
0.12 K /W


Part Number MMG450D120B6TC
Description IGBT
Maker MacMic
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MMG450D120B6TC Datasheet PDF






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