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MMG450WE065B6EN Datasheet Preview

MMG450WE065B6EN Datasheet

IGBT

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September 2018
MMG450WE065B6EN
Version 01
650V 450A IGBT Module
RoHS Compliant
PRODUCT FEATURES
IGBT3 CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
TC=50, TJmax=175
tp=1ms
TC=25, TJmax=175
Values
Unit
650
V
±20
505
450
A
900
1250
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
650
V
450
A
900
16200
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
3




MacMic

MMG450WE065B6EN Datasheet Preview

MMG450WE065B6EN Datasheet

IGBT

No Preview Available !

MMG450WE065B6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=7.2mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=450A, VGE=15V, TJ=25
IC=450A, VGE=15V, TJ=125
IC=450A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=650V, VGE=0V, TJ=25
VCE=650V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Qg
Gate Charge
VCE=300V, IC=450A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=300V,IC=450A
RG =1.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=300V,IC=450A
RG =1.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=300V,IC=450A
RG =1.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
ISC
Short Circuit Current
tpsc6µS , VGE=15V
TJ=150,VCC=360V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
4.9
-500
Typ.
5.8
1.45
1.6
1.7
3
30
0.9
280
300
100
110
450
500
70
90
3.5
5.5
14.5
18
2250
Max. Unit
6.5
1.9
V
3
mA
15 mA
500 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.12 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=450A , VGE=0V, TJ=25
VF
Forward Voltage
IF=450A , VGE=0V, TJ=125
IF=450A , VGE=0V, TJ=150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=450A , VR=300V
dIF/dt=-4000A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.55 1.95
1.50
V
1.45
450
ns
120
A
35
µC
10.5
mJ
0.19 K /W
4


Part Number MMG450WE065B6EN
Description IGBT
Maker MacMic
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MMG450WE065B6EN Datasheet PDF






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