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MacMic

MMG600WB060B6EN Datasheet Preview

MMG600WB060B6EN Datasheet

IGBT

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May 2015
MMG600WB060B6EN
600V 600A IGBT Module
Version 01
RoHS Compliant
PRODUCT FEATURES
IGBT3 CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=50
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
600
V
±20
700
600
A
1200
1578
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
600
V
IF(AV)
IFRM
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
600
A
1200
I2t
TJ =125, t=10ms, VR=0V
17
KA2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMG600WB060B6EN Datasheet Preview

MMG600WB060B6EN Datasheet

IGBT

No Preview Available !

MMG600WB060B6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
chip
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=9.6mA
IC=600A, VGE=15V, TJ=25
IC=600A, VGE=15V, TJ=125
VCE=600V, VGE=0V, TJ=25
VCE=600V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
4.9 5.8
1.45
1.6
-400
0.68
6.5
1.9 V
1 mA
5 mA
400 nA
VCE=300V, IC=600A , VGE=±15V
6.5
µC
VCE=25V, VGE=0V, f =1MHz
39
nF
1.15
nF
VCC=300V,IC=600A
RG =2.4,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=300V,IC=600A
RG =2.4,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=300V,IC=600A
RG =2.4,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc6µS , VGE=15V
TJ=125,VCC=360V
100
ns
110
ns
90
ns
95
ns
670
ns
710
ns
70
ns
75
ns
8.9
mJ
9.9
mJ
21.5
mJ
25.0
mJ
3000
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.095 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VF
Forward Voltage
chip
IF=600A , VGE=0V, TJ=25
IF=600A , VGE=0V, TJ=125
1.55 1.95
V
1.50
trr
IRRM
Erec
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Energy
IF=600A , VR=300V
dIF/dt=-6000A/μs
TJ =125
400
ns
300
A
9.3
mJ
RthJCD
Junction to Case Thermal Resistance Per Diode
0.16 K /W
NTC CHARACTERISTICS
Symbol
Parameter/Test Conditions
R25
B25/50
Resistance
R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
TC =25
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
5
K
3375
K
2


Part Number MMG600WB060B6EN
Description IGBT
Maker MacMic
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MMG600WB060B6EN Datasheet PDF






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