MMG600WB060B6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
chip
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=9.6mA
IC=600A, VGE=15V, TJ=25℃
IC=600A, VGE=15V, TJ=125℃
VCE=600V, VGE=0V, TJ=25℃
VCE=600V, VGE=0V, TJ=125℃
VCE=0V,VGE=±15V, TJ=25℃
4.9 5.8
1.45
1.6
-400
0.68
6.5
1.9 V
1 mA
5 mA
400 nA
Ω
VCE=300V, IC=600A , VGE=±15V
6.5
µC
VCE=25V, VGE=0V, f =1MHz
39
nF
1.15
nF
VCC=300V,IC=600A
RG =2.4Ω,
VGE=±15V,
Inductive Load
TJ=25℃
TJ=125℃
TJ=25℃
TJ=125℃
VCC=300V,IC=600A
RG =2.4Ω,
VGE=±15V,
Inductive Load
TJ=25℃
TJ=125℃
TJ=25℃
TJ=125℃
VCC=300V,IC=600A
RG =2.4Ω,
VGE=±15V,
Inductive Load
TJ=25℃
TJ=125℃
TJ=25℃
TJ=125℃
tpsc≤6µS , VGE=15V
TJ=125℃,VCC=360V
100
ns
110
ns
90
ns
95
ns
670
ns
710
ns
70
ns
75
ns
8.9
mJ
9.9
mJ
21.5
mJ
25.0
mJ
3000
A
RthJC
Junction to Case Thermal Resistance （ Per IGBT）
0.095 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VF
Forward Voltage
chip
IF=600A , VGE=0V, TJ=25℃
IF=600A , VGE=0V, TJ=125℃
1.55 1.95
V
1.50
trr
IRRM
Erec
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Energy
IF=600A , VR=300V
dIF/dt=-6000A/μs
TJ =125℃
400
ns
300
A
9.3
mJ
RthJCD
Junction to Case Thermal Resistance （ Per Diode）
0.16 K /W
NTC CHARACTERISTICS
Symbol
Parameter/Test Conditions
R25
B25/50
Resistance
R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
TC =25℃
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
5
KΩ
3375
K
2
