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MacMic

MMG600WB065B6TC Datasheet Preview

MMG600WB065B6TC Datasheet

IGBT

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December 2020
PRODUCT FEATURES
IGBT CHIP(Trench+FS)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
MMG600WB065B6TC
Preliminary
650V 600A IGBT Module
RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
TC=55, TJmax=175
tp=1ms
TC=25, TJmax=175
Values
Unit
650
V
±20
690
600
A
1200
1760
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
IF(AV)
Repetitive Reverse Voltage
Average Forward Current
TJ=25
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
650
600
1200
23.1
Unit
V
A
kA2s
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMG600WB065B6TC Datasheet Preview

MMG600WB065B6TC Datasheet

IGBT

No Preview Available !

MMG600WB065B6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=9.6mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=600A, VGE=15V, TJ=25
IC=600A, VGE=15V, TJ=125
IC=600A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=650V, VGE=0V, TJ=25
VCE=650V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
RGint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=600A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=300V,IC=600A
RG =1.5,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=300V,IC=600A
RG =1.5,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=300V,IC=600A
RG =1.5,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
ISC
Short Circuit Current
tpsc6µs , VGE=15V
TJ=150,VCC=360V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-500
Typ.
6.0
1.55
1.75
1.8
0.5
3.3
39
1.3
80
90
130
140
480
520
80
100
17.6
24
23.5
30.5
3000
Max. Unit
6.5
2.0
V
3
mA
15 mA
500 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.085 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=600A , VGE=0V, TJ=25
IF=600A , VGE=0V, TJ=125
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=600A , VGE=0V, TJ=150
IF=600A , VR=300V
dIF/dt=-4500A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.7
2.1
1.55
V
1.45
280
ns
295
A
45
µC
12
mJ
0.15 K /W
2


Part Number MMG600WB065B6TC
Description IGBT
Maker MacMic
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MMG600WB065B6TC Datasheet PDF






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