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MacMic

MMG600WB170B Datasheet Preview

MMG600WB170B Datasheet

IGBT

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February 2016
PRODUCT FEATURES
High short circuit capability,self limiting short circuit current
IGBT CHIP(Highly rugged SPT+ design)
VCE(sat) with positive temperature coefficient
Ultra Low Loss,High Ruggedness
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
MMG600WB170B
Version 01
1700V 600A IGBT Module
RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
TC=25
TC=100
tp=1ms
Values
Unit
1700
V
±20
900
600
A
1200
3750
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =150, t=10ms, VR=0V
Values
Unit
1700
V
600
A
1200
40000
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




MacMic

MMG600WB170B Datasheet Preview

MMG600WB170B Datasheet

IGBT

No Preview Available !

MMG600WB170B
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=24mA
VCE(sat)
Collector Emitter
Saturation Voltage
chip
terminal
IC=600A, VGE=15V, TJ=25
IC=600A, VGE=15V, TJ=150
IC=600A, VGE=15V, TJ=25
IC=600A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1700V, VGE=0V, TJ=25
VCE=1700V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Qg
Gate Charge
VCE=900V, IC=600A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=900V,IC=600A
RG =2.4,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=900V,IC=600A
RG =2.4,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=900V,IC=600A
RG =2.4,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
ISC
Short Circuit Current
TJ=150
tpsc10µS , VGE=15V
TJ=150,VCC=1000V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.4
-500
Typ.
6.2
2.25
2.6
2.7
3.1
4
36.6
2.15
210
250
190
200
630
730
180
320
270
340
350
152
200
215
1920
Max. Unit
7.4
2.6
V
3.1
3
mA
20 mA
500 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.04 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
chip
terminal
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
IF=600A , VGE=0V, TJ=25
IF=600A , VGE=0V, TJ=150
IF=600A , VGE=0V, TJ=25
IF=600A , VGE=0V, TJ=150
IF=600A , VR=900V
dIF/dt=-3000A/μs
TJ =150
Erec
Reverse Recovery Energy
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.8
2.2
1.95
V
2.3
2.7
2.45
1200
ns
360
A
215
µC
140
mJ
0.09 K /W
2


Part Number MMG600WB170B
Description IGBT
Maker MacMic
PDF Download

MMG600WB170B Datasheet PDF






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