900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






MacMic

MMG75J120U6TN Datasheet Preview

MMG75J120U6TN Datasheet

IGBT

No Preview Available !

August 2019
MMG75J120U6TN
Version 01
1200V 75A IGBT Module
RoHS Compliant
PRODUCT FEATURES
IGBT3 Chip(Trench+Field Stop technology)
Low switching losses
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Popular SOT-227 Package
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
IGBT
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25,TJmax=150
TC=80,TJmax=150
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=150
Values
Unit
1200
V
±20
105
75
A
150
348
W
Diode
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
75
A
150
1150
A2S
MacMic Science & Technology Co., Ltd.
1
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMG75J120U6TN Datasheet Preview

MMG75J120U6TN Datasheet

IGBT

No Preview Available !

MMG75J120U6TN
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=3mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=75A, VGE=15V, TJ=25
IC=75A, VGE=15V, TJ=125
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=75A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=75A
RG =4.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=75A
RG =4.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=75A
RG =4.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125,VCC=900V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
5.8
1.7
1.9
10
0.7
5.3
200
260
290
30
50
420
520
70
90
6.6
9.4
6.8
8.0
300
Max. Unit
6.5
2.15 V
1
mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.36 K /W
Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=75A , VGE=0V, TJ=25
IF=75A , VGE=0V, TJ=125
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=75A , VR=600V
dIF/dt=-2000A/μs
TJ =125
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.65 2.15
V
1.65
300
ns
83
A
13
µC
6.5
mJ
0.6 K /W
2


Part Number MMG75J120U6TN
Description IGBT
Maker MacMic
PDF Download

MMG75J120U6TN Datasheet PDF






Similar Datasheet

1 MMG75J120U6TC IGBT
MacMic
2 MMG75J120U6TN IGBT
MacMic





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy