MMG75J120U - IGBT

Datasheet Summary

Features

High Short Circuit Capability.
Free wheeling diodes with fast and soft reverse recovery.
VCE(sat) with positive temperature coefficient.
Ultra Low Loss,High Ruggedness.
Popular SOT-227 Package Version 01 MMG75J120U 1200V 75A IGBT Module RoHS Compliant.

MacMic

📥 Download Datasheet

Datasheet Details

Part number	MMG75J120U
Manufacturer	MacMic
File Size	452.41 KB
Description	IGBT
Datasheet	MMG75J120U Datasheet
Additional preview pages of the MMG75J120U datasheet.

📁 Similar Datasheet

MMG - METALLIZED POLYESTER FILM CAPACITORS (Rubycon)
MMG-202543-M5 - GaN Power Amplifier (CML)
MMG-446040-M5 - GaN Power Amplifier (CML)
MMG05N60D - N-Channel IGBT (Motorola)
MMG1001NT1 - Gallium Arsenide CATV Integrated Amplifier (Freescale Semiconductor)
MMG1001R2 - Gallium Arsenide CATV Integrated Amplifier (Motorola)
MMG1001T1 - Gallium Arsenide CATV Integrated Amplifier (Freescale Semiconductor)
MMG15241HT1 - pHEMT (Freescale Semiconductor)
MMG2001R2 - Gallium Arsenide CATV Integrated Amplifier (Motorola)
MMG2001T1 - Gallium Arsenide CATV Integrated Amplifier (Freescale Semiconductor)

Other Datasheets by MacMic

Full PDF Text Transcription

Click to expand full text

April 2015 PRODUCT FEATURES □ High Short Circuit Capability □ Free wheeling diodes with fast and soft reverse recovery □ VCE(sat) with positive temperature coefficient □ Ultra Low Loss,High Ruggedness □ Popular SOT-227 Package Version 01 MMG75J120U 1200V 75A IGBT Module RoHS Compliant APPLICATIONS □ Invertor Convertor □ Welder SMPS and UPS □ Induction Heating IGBT-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC=80℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT T C =25°C unless otherwise specified Values Unit 1200 ±20 V 105 75 A 150 630 W Diode-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions

Published: Jun 18, 2021 |