MMN1000DB010B mosfet equivalent, 100v 1000a n-ch power mosfet.
ƶ RDS(ON).typ=0.57mȍ@VGS=10V ƶ 175ćoperating temperature ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery body Diode ƶ 10K ȍ Gate Protected Resistance Inside
MM.
ƶ High efficiency DC/DC Converters ƶ Synchronous Rectifier
Type MMN1000DB010B
VDS 100V
ID 1000A
RDS(ON).max TJ=25ć 0.
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