900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






MacMic

MMN1000DB010B Datasheet Preview

MMN1000DB010B Datasheet

100V 1000A N-ch Power MOSFET

No Preview Available !

March 2016
PRODUCT FEATURES
ƶ RDS(ON).typ=0.57mȍ@VGS=10V
ƶ 175ćoperating temperature
ƶ Low Gate Charge Minimize Switching Loss
ƶ Fast Recovery body Diode
ƶ 10K ȍ Gate Protected Resistance Inside
MMN1000DB010B
100V 1000A N-ch Power MOSFET Module
Preliminary
RoHS Compliant
APPLICATIONS
ƶ High efficiency DC/DC Converters
ƶ Synchronous Rectifier
Type
MMN1000DB010B
VDS
100V
ID
1000A
RDS(ON).max TJ=25ć
0.75mȍ
TJmax
175ć
Marking
MMN1000DB010B
Package
NDB
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VDSS Drain - Source Voltage
TJ=25ć
VGSS Gate - Source Voltage
ID
Continuous Drain Current
TC=25ć
TC=80ć
IDM
Pulsed Drain Current at VGS=10V
Limited by TJmax
PD
Maximum Power Dissipation
EAS
Single Pulse Avalanche Energy
VDD=50V,L=1mH
Values
Unit
100
V
±20
1250
1000
A
2000
1360
W
2500
mJ
THERMAL AND MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
RthJC Thermal resistance,junction to case Per MOSFET
Values
Unit
0.11
K/W
TJmax
TSTG
Max. Junction Temperature
Storage Temperature Range
175
ć
-40̚125
Visol
Torque
Isolation Breakdown Voltage
to heatsink
to terminal
AC, 50Hz(R.M.S), t=1minute
Recommended˄M5˅
Recommended˄M5˅
3000
V
2.5̚5
Nm
2.5̚5
Weight
240
g
MacMic Science & Technology Co., Ltd.
Add˖#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.˖+86-519-85163708 Fax˖+86-519-85162291 Post Code˖213022 Website ˖www.macmicst.com




MacMic

MMN1000DB010B Datasheet Preview

MMN1000DB010B Datasheet

100V 1000A N-ch Power MOSFET

No Preview Available !

MMN1000DB010B
MOSFET
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
V(BR)DSS Drain Source Breakdown Voltage
VGS=0V, ID=1mA
RDS(ON) Drain Source ON Resistance
VGS=10V, ID=500A(chip)
VGS=10V, ID=500A(terminal)
IDSS
Drain Source Leakage Current
VDS=100V,VGS=0V
VGS(th) Gate Threshold Voltage
VGS= VDS , ID=2mA
IGSS
Gate Leakage Current
VDS=0V,VGS=±20V
Rgint
Integrated Gate Resistor
Qg
Total Gate Charge
Qgs
Gate Source Charge
VDD=65V, ID=600A , VGS=10V
Qgd
Gate Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
VDS=25V, VGS=0V, f =1MHz
Crss
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
VDD=60V,ID=200A,
RG =5ȍ, VGS=10V,
Resistive Load
TJ=25ć
Min. Typ. Max. Unit
100
V
0.57 0.75
mȍ
0.8
0.95
2
mA
2.0
4.0
V
-2
2
mA
1.6
ȍ
1320
nC
340
nC
450
nC
88
nF
6.1
nF
1.45
nF
15
ns
38
ns
364
ns
23
ns
Source-Drain BODY-DIODE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
Min.
ISD
Continuous Source Drain Current
ISDM
Pulse Source Drain Current
Limited by TJmax
VSD
Forward Voltage
trr
Reverse Recovery time
QRR
Reverse Recovery Charge
IS=500A , VGS=0V
IF=200A , VGS=0V
dIF/dt=-100A/ȝs
Typ.
1.0
220
4400
Max. Unit
1250 A
2000 A
1.2
V
ns
nC
2


Part Number MMN1000DB010B
Description 100V 1000A N-ch Power MOSFET
Maker MacMic
PDF Download

MMN1000DB010B Datasheet PDF






Similar Datasheet

1 MMN1000DB010B MOSFET
MacMic
2 MMN1000DB010B 100V 1000A N-ch Power MOSFET
MacMic





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy