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MMN1000DB010B - 100V 1000A N-ch Power MOSFET

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Features

  • ƶ RDS(ON). typ=0.57mȍ@VGS=10V ƶ 175ćoperating temperature ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery body Diode ƶ 10K ȍ Gate Protected Resistance Inside MMN1000DB010B 100V 1000A N-ch Power MOSFET Module Preliminary RoHS Compliant.

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Datasheet Details

Part number MMN1000DB010B
Manufacturer MacMic
File Size 772.27 KB
Description 100V 1000A N-ch Power MOSFET
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March 2016 PRODUCT FEATURES ƶ RDS(ON).typ=0.57mȍ@VGS=10V ƶ 175ćoperating temperature ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery body Diode ƶ 10K ȍ Gate Protected Resistance Inside MMN1000DB010B 100V 1000A N-ch Power MOSFET Module Preliminary RoHS Compliant APPLICATIONS ƶ High efficiency DC/DC Converters ƶ Synchronous Rectifier Type MMN1000DB010B VDS 100V ID 1000A RDS(ON).max TJ=25ć 0.
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