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MMN1000DB010B - MOSFET

Key Features

  • ƶ RDS(ON). typ=0.57mȍ@VGS=10V ƶ 175ćoperating temperature ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery body Diode ƶ 10K ȍ Gate Protected Resistance Inside MMN1000DB010B 100V 1000A N-ch Power MOSFET Module Preliminary RoHS Compliant.

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Datasheet Details

Part number MMN1000DB010B
Manufacturer MacMic
File Size 772.27 KB
Description MOSFET
Datasheet download datasheet MMN1000DB010B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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March 2016 PRODUCT FEATURES ƶ RDS(ON).typ=0.57mȍ@VGS=10V ƶ 175ćoperating temperature ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery body Diode ƶ 10K ȍ Gate Protected Resistance Inside MMN1000DB010B 100V 1000A N-ch Power MOSFET Module Preliminary RoHS Compliant APPLICATIONS ƶ High efficiency DC/DC Converters ƶ Synchronous Rectifier Type MMN1000DB010B VDS 100V ID 1000A RDS(ON).max TJ=25ć 0.