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MMN400A006U1 Datasheet Preview

MMN400A006U1 Datasheet

60V 400A N-ch Power MOSFET

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August 2016
MMN400A006U1
60V 400A N-ch Power MOSFET Module
Preliminary
RoHS Compliant
PRODUCT FEATURES
RDS(ON).typ=0.35m@VGS=10V
175operating temperature
Low Gate Charge Minimize Switching Loss
Fast Recovery body Diode
20K Gate Protected Resistance Inside
Inside the module,each MOSFET chip has a gate resistance:2.2
APPLICATIONS
High efficiency DC/DC Converters
ISG EV Products
UPS inverter
Type
MMN400A006U1
VDS
60V
ID
400A
RDS(ON).max TJ=25
0.75m
TJmax
175
Marking
MMN400A006U1
Package
NA
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VDSS Drain - Source Voltage
TJ=25
VGSS Gate - Source Voltage
ID
Continuous Drain Current
TC=25, TJmax=175
TC=110, TJmax=175
IDM
Pulsed Drain Current at VGS=10V
Limited by TJmax
PD
Maximum Power Dissipation
TC=25, TJmax=175
EAS
Single Pulse Avalanche Energy
VDD=50V,L=1mH
Values
Unit
60
V
±20
610
400
A
800
1000
W
TBD
mJ
THERMAL AND MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
RthJC Thermal resistance,junction to case Per MOSFET
TJmax Max. Junction Temperature
TSTG Storage Temperature Range
to heatsink
Torque
to terminal
RecommendedM5
RecommendedM5
Values
Unit
0.15
K/W
175
-40125
2.55
Nm
2.55
Weight
110
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




MacMic

MMN400A006U1 Datasheet Preview

MMN400A006U1 Datasheet

60V 400A N-ch Power MOSFET

No Preview Available !

MMN400A006U1
MOSFET
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
V(BR)DSS Drain Source Breakdown Voltage
VGS=0V, ID=1mA
RDS(ON) Drain Source ON Resistance
VGS=10V, ID=400A
IDSS
Drain Source Leakage Current
VDS=60V,VGS=0V
VGS(th) Gate Threshold Voltage
VGS= VDS , ID=1mA
IGSS
Gate Leakage Current
VDS=0V,VGS=±20V
Rgint
Integrated Gate Resistor
Qg
Total Gate Charge
Qgs
Gate Source Charge
VDD=30V, ID=200A , VGS=10V
Qgd
Gate Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
VDS=25V, VGS=0V, f =1MHz
Crss
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
VDD=30V,ID=300A,
RG =1.5,
VGS=10V,
Resistive Load
TJ=25
Min. Typ. Max. Unit
60
V
0.35 0.75 m
2
mA
2.0
4.0
V
-2
2
mA
1.05
675
nC
223
nC
208
nC
37
nF
5
nF
1.8
nF
170
ns
210
ns
260
ns
80
ns
Source-Drain BODY-DIODE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
Min. Typ.
ISD
Continuous Source Drain Current
ISDM
Pulse Source Drain Current
Limited by TJmax
VSD
Forward Voltage
IS=400A , VGS=0V
0.85
trr
Reverse Recovery time
IF=100A , VGS=0V
140
QRR
Reverse Recovery Charge
dIF/dt=-100A/μs
550
Max. Unit
400
A
800
A
1.2
V
ns
nC
2


Part Number MMN400A006U1
Description 60V 400A N-ch Power MOSFET
Maker MacMic
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