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MMN400A010U1 Datasheet Preview

MMN400A010U1 Datasheet

100V 400A N-ch Power MOSFET

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August 2016
MMN400A010U1
100V 400A N-ch Power MOSFET Module
Preliminary
RoHS Compliant
PRODUCT FEATURES
RDS(ON).typ=1.1m@VGS=10V
175operating temperature
Low Gate Charge Minimize Switching Loss
Fast Recovery body Diode
20K Gate Protected Resistance Inside
Inside the module,each MOSFET chip has a gate resistance:2.2
APPLICATIONS
High efficiency DC/DC Converters
ISG EV Products
UPS inverter
Type
MMN400A010U1
VDS
100V
ID
400A
RDS(ON).max TJ=25
1.4m
TJmax
175
Marking
MMN400A010U1
Package
NA
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VDSS
VGSS
Drain - Source Voltage
Gate - Source Voltage
TJ=25
ID
Continuous Drain Current
IDM
Pulsed Drain Current at VGS=10V
TC=25, TJmax=175
TC=100, TJmax=175
Limited by TJmax
PD
Maximum Power Dissipation
EAS
Single Pulse Avalanche Energy
TC=25, TJmax=175
VDD=50V,L=1mH
Values
Unit
100
V
±20
550
400
A
800
1071
W
3000
mJ
THERMAL AND MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
RthJC Thermal resistance,junction to case Per MOSFET
Values
Unit
0.14
K/W
TJmax
TSTG
Max. Junction Temperature
Storage Temperature Range
175
-40125
to heatsink
Torque
to terminal
RecommendedM5
RecommendedM5
2.55
Nm
2.55
Weight
110
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




MacMic

MMN400A010U1 Datasheet Preview

MMN400A010U1 Datasheet

100V 400A N-ch Power MOSFET

No Preview Available !

MMN400A010U1
MOSFET
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
V(BR)DSS Drain Source Breakdown Voltage
VGS=0V, ID=1mA
RDS(ON) Drain Source ON Resistance
VGS=10V, ID=300A
IDSS
VGS(th)
Drain Source Leakage Current
Gate Threshold Voltage
VDS=100V,VGS=0V
VGS= VDS , ID=1mA
IGSS
Gate Leakage Current
VDS=0V,VGS=±20V
Rgint
Integrated Gate Resistor
Qg
Total Gate Charge
Qgs
Gate Source Charge
VDD=65V, ID=300A , VGS=10V
Qgd
Gate Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
VDS=25V, VGS=0V, f =1MHz
Crss
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
VDD=50V,ID=200A,
RG =5, VGS=10V,
Resistive Load
TJ=25
Min. Typ. Max. Unit
100
V
1.1
1.4 m
2
mA
2.0
4.0
V
-2
2
mA
1.2
660
nC
170
nC
225
nC
44
nF
3.05
nF
0.73
nF
122
ns
88
ns
540
ns
112
ns
Source-Drain BODY-DIODE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
Min. Typ.
ISD
Continuous Source Drain Current
ISDM
Pulse Source Drain Current
Limited by TJmax
VSD
Forward Voltage
IS=300A , VGS=0V
1.0
trr
Reverse Recovery time
IF=200A , VGS=0V
130
QRR
Reverse Recovery Charge
dIF/dt=-140A/μs
800
Max. Unit
400
A
800
A
1.2
V
ns
nC
2


Part Number MMN400A010U1
Description 100V 400A N-ch Power MOSFET
Maker MacMic
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