MMN600DB015B mosfet equivalent, mosfet.
□ RDS(ON).typ=1.8mΩ@VGS=10V □ 175℃ junction temperature
□ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside
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□ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter
Type MMN600DB015B
VDS 150V
ID 600A
RDS(ON).max T.
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